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Datasheet File OCR Text: |
savantic semiconductor product specification silicon npn power transistors 2SC2361 description with t o-220c package complement to type 2sa1123 low collector saturation voltage applications for power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 70 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 4 a p c collector dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -50~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC2361 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1 a; i b =0 70 v v (br)ebo emitter-base breakdown voltage i e =1m a; i c =0 6 v v cesat collector-emitter saturation voltage i c =4a; i b =0.4a 1.5 v v be base-emitter on voltage i c =3a ; v ce =4v 2.0 v i cbo collector cut-off current v cb =100v; i e =0 10 a i ebo emitter cut-off current v eb =6v; i c =0 10 a h fe dc current gain i c =2.5a ; v ce =3v 50 240 f t transition frequency i c =0.5a ; v ce =10v 70 mhz savantic semiconductor product specification 3 silicon npn power transistors 2SC2361 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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